PartNumber | BC817K16E6433HTMA1 | BC817K16E6327HTSA1 | BC817K16WH6327XTSA1 |
Description | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A | Bipolar Transistors - BJT NPN Silicon AF Transistor |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 | SOT-323-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 45 V | 45 V | 45 V |
Collector Base Voltage VCBO | 50 V | 50 V | 50 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Collector Emitter Saturation Voltage | 0.7 V | 0.7 V | 0.7 V |
Maximum DC Collector Current | 1000 mA | 1000 mA | 1000 mA |
Gain Bandwidth Product fT | 170 MHz | 170 MHz | 170 MHz |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | BC817 | BC817 | BC817 |
DC Current Gain hFE Max | 250 | 250 | 250 |
Height | 1 mm | - | - |
Length | 2.9 mm | - | - |
Packaging | Reel | Reel | Reel |
Width | 1.3 mm | - | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Continuous Collector Current | 500 mA | 500 mA | 500 mA |
DC Collector/Base Gain hfe Min | 100 | 100 | 100 |
Pd Power Dissipation | 500 mW | 500 mW | 250 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 10000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 817K-16 BC BC817K16E6433XT E6433 SP000271829 | 817K-16 BC BC817K16E6327XT E6327 SP000271788 | 817K-16W BC BC817K16WH6327XT H6327 SP000786164 |
Unit Weight | 0.000282 oz | 0.000282 oz | 0.000176 oz |