PartNumber | BC817K40E6327HTSA1 | BC817K40E6327XT | BC817K40E6359HTMA1 |
Description | Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5 | Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5 | TRANS NPN 45V SOT323-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | SOT-23-3 | - |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
Collector Base Voltage VCBO | 50 V | 50 V | - |
Emitter Base Voltage VEBO | 5 V | 5 V | - |
Collector Emitter Saturation Voltage | 0.7 V | 0.7 V | - |
Maximum DC Collector Current | 1000 mA | 1000 mA | - |
Gain Bandwidth Product fT | 170 MHz | 170 MHz | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | BC817 | - | - |
DC Current Gain hFE Max | 630 at 100 mA, 1 V | 630 at 100 mA, 1 V | - |
Height | 1 mm | - | - |
Length | 2.9 mm | - | - |
Packaging | Reel | Reel | - |
Width | 1.3 mm | - | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Continuous Collector Current | 500 mA | 500 mA | - |
DC Collector/Base Gain hfe Min | 250 at 100 mA, 1 V | 250 at 100 mA, 1 V | - |
Pd Power Dissipation | 500 mW | 500 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Part # Aliases | 817K-40 BC BC817K4E6327XT E6327 SP000271895 | 817K-40 BC BC817K40E6327HTSA1 E6327 SP000271895 | - |
Unit Weight | 0.000282 oz | 0.000282 oz | - |