 |  | | |
| PartNumber | BC847AWT1G | BC847AWT1 | BC847AWT1G/ONSEMI |
| Description | Bipolar Transistors - BJT 100mA 50V NPN | Bipolar Transistors - BJT 100mA 50V NPN | |
| Manufacturer | ON Semiconductor | ON | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.6 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC847AW | - | - |
| Height | 0.85 mm | - | - |
| Length | 2.1 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.24 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| DC Collector/Base Gain hfe Min | 90 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000219 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| BC847AWT1G | Bipolar Transistors - BJT 100mA 50V NPN | ||
| BC847AWT1 | Bipolar Transistors - BJT 100mA 50V NPN | ||
| BC847AWT1G/ONSEMI | Neu und Original | ||
| BC847AWT1GONSEMI | Neu und Original | ||
ON Semiconductor |
BC847AWT1G | Bipolar Transistors - BJT 100mA 50V NPN |