 |  | | |
| PartNumber | BC856AT TR | BC856AT | BC856AT , MAX6337US20D3 |
| Description | Bipolar Transistors - BJT PNP 80Vcbo 65Vceo 5.0Vebo 100mA 250mW | 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | |
| Manufacturer | Central Semiconductor | NXP | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-523-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 65 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.4 V | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC856AT | - | - |
| DC Current Gain hFE Max | 250 | - | - |
| Packaging | Reel | - | - |
| Brand | Central Semiconductor | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 125 | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BC856AT PBFREE TR | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Central Semiconductor |
BC856AT TR | Bipolar Transistors - BJT PNP 80Vcbo 65Vceo 5.0Vebo 100mA 250mW | |
| BC856AT TR | Bipolar Transistors - BJT PNP 80Vcbo 65Vceo 5.0Vebo 100mA 250mW | ||
| BC856AT/R | 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | ||
| BC856AT | 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | ||
| BC856AT , MAX6337US20D3 | Neu und Original | ||
| BC856AT115 | Neu und Original | ||
NXP Semiconductors |
BC856AT,115 | Bipolar Transistors - BJT TRANS GP TAPE-7 |