| PartNumber | BC856BMBYL | BC856BMYL |
| Description | Bipolar Transistors - BJT BC856BMB/XQFN3/REEL 7" Q1/T1 * | Bipolar Transistors - BJT BC856BM/XQFN3/REEL 7" Q1/T1 *S |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | DFN-1006-3 | DFN-1006B-3 |
| Transistor Polarity | PNP | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | - 60 V | - |
| Collector Base Voltage VCBO | - 80 V | - |
| Emitter Base Voltage VEBO | - 6 V | - |
| Collector Emitter Saturation Voltage | - 200 mV | - |
| Maximum DC Collector Current | - 100 mA | - |
| Gain Bandwidth Product fT | 100 MHz | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| DC Current Gain hFE Max | 475 at - 2 mA, - 5 V | - |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | - 100 mA | - |
| DC Collector/Base Gain hfe Min | 220 at - 2 mA, - 5 V | - |
| Pd Power Dissipation | 250 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 10000 | 10000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.000024 oz | - |