 |  | |
| PartNumber | BC856BS,135 | BC856BS,115 |
| Description | Bipolar Transistors - BJT PNP/PNP -65 V -100mA | Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | TSSOP-6 |
| Transistor Polarity | PNP | PNP |
| Collector Emitter Voltage VCEO Max | - 65 V | - 65 V |
| Emitter Base Voltage VEBO | - 6 V | - 6 V |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | - 100 mA | - 100 mA |
| DC Collector/Base Gain hfe Min | 200 | 290 |
| Pd Power Dissipation | 200 mW | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 10000 | 3000 |
| Subcategory | Transistors | Transistors |
| Unit Weight | 0.000212 oz | 0.035274 oz |
| Configuration | - | Dual |
| Collector Base Voltage VCBO | - | 80 V |
| Maximum DC Collector Current | - | - 200 mA |
| Gain Bandwidth Product fT | - | 100 MHz |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| DC Current Gain hFE Max | - | 200 at 2 mA, 5 V |
| Height | - | 1 mm |
| Length | - | 2.2 mm |
| Width | - | 1.35 mm |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BC856BS,135 | Bipolar Transistors - BJT PNP/PNP -65 V -100mA | |
| BC856BS,115 | Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR | ||
| BC856BS,135 | Bipolar Transistors - BJT PNP/PNP -65 V -100mA | ||
| BC856BS,115 | TRANS 2PNP 65V 0.1A 6TSSOP | ||
| BC856BS,115-CUT TAPE | Neu und Original |