 |  | | |
| PartNumber | BC857AT-7 | BC857AT | BC857AT E6327 |
| Description | Bipolar Transistors - BJT PNP BIPOLAR | ||
| Manufacturer | Diodes Incorporated | NXP/PHILIPS | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | N | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-523-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC857A | - | - |
| Height | 0.75 mm | - | - |
| Length | 1.6 mm | - | - |
| Packaging | Reel | - | - |
| Width | 0.8 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| DC Collector/Base Gain hfe Min | 125 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000071 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Diodes Incorporated |
BC857AT-7-F | Bipolar Transistors - BJT PNP BIPOLAR | |
| BC857AT-7 | Bipolar Transistors - BJT PNP BIPOLAR | ||
| BC857AT-7 | Bipolar Transistors - BJT PNP BIPOLAR | ||
| BC857AT-7-F | Bipolar Transistors - BJT PNP BIPOLAR | ||
| BC857AT | Neu und Original | ||
| BC857AT E6327 | Neu und Original | ||
| BC857AT-TP | Neu und Original | ||
| BC857AT115 | Now Nexperia BC857AT - Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | ||
| BC857ATA | Neu und Original | ||
| BC857ATTR | Neu und Original | ||
NXP Semiconductors |
BC857AT,115 | Bipolar Transistors - BJT TRANS GP TAPE-7 |