PartNumber | BC857BE6327HTSA1 | BC857BE6433HTMA1 |
Description | Bipolar Transistors - BJT PNP 45 V 100 mA | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR |
Manufacturer | Infineon | Infineon |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-23-3 |
Transistor Polarity | PNP | PNP |
Configuration | Single | Dual |
Collector Emitter Voltage VCEO Max | 45 V | 45 V |
Collector Base Voltage VCBO | 50 V | 50 V |
Emitter Base Voltage VEBO | 5 V | 5 V |
Collector Emitter Saturation Voltage | 250 mV | 250 mV |
Maximum DC Collector Current | 200 mA | 200 mA |
Gain Bandwidth Product fT | 250 MHz | 250 MHz |
Minimum Operating Temperature | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Series | BC857 | BC857 |
DC Current Gain hFE Max | 475 | 475 |
Packaging | Reel | Reel |
Brand | Infineon Technologies | Infineon Technologies |
Continuous Collector Current | 100 mA | 100 mA |
DC Collector/Base Gain hfe Min | 220 | 220 |
Pd Power Dissipation | 330 mW | 330 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | - |
Factory Pack Quantity | 3000 | 10000 |
Subcategory | Transistors | Transistors |
Part # Aliases | 857B BC BC857BE6327XT E6327 SP000010633 | 857B BC BC857BE6433XT E6433 SP000010648 |
Unit Weight | 0.000282 oz | 0.000282 oz |