BC857BLP4 stock, BC857BLP4, BC857BLP4-7B


PartNumber	BC857BLP4-7B	BC857BLP4-7	BC857BLP4-7-B
Description	Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K	Bipolar Transistors - BJT 250mW -45V	Trans GP BJT PNP 45V 0.1A 3-Pin DFN-H4 T/R (Alt: BC857BLP4-7B)
Manufacturer	Diodes Incorporated	Diodes Incorporated	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	DFN1006H4-3	DFN-3	-
Transistor Polarity	PNP	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	- 45 V	45 V	-
Collector Base Voltage VCBO	- 50 V	50 V	-
Emitter Base Voltage VEBO	- 5 V	5 V	-
Collector Emitter Saturation Voltage	- 650 mV	-	-
Maximum DC Collector Current	- 200 mA	0.1 A	-
Gain Bandwidth Product fT	100 MHz	100 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	BC857B	BC857B	-
Packaging	Reel	Reel	-
Brand	Diodes Incorporated	Diodes Incorporated	-
Continuous Collector Current	- 100 mA	-	-
DC Collector/Base Gain hfe Min	220 at -2 mA, - 5 V	220	-
Pd Power Dissipation	250 mW	250 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	10000	3000	-
Subcategory	Transistors	Transistors	-
DC Current Gain hFE Max	-	220 at 2 mA, 5 V	-
Height	-	0.35 mm	-
Length	-	1 mm	-
Width	-	0.6 mm	-

Search Part Number : "BC857BLP4", Match & Start with "BC857BLP4" - Total : 5

Hersteller	Teil #	Beschreibung
Diodes Incorporated	BC857BLP4-7B	Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
Diodes Incorporated	BC857BLP4-7	Bipolar Transistors - BJT 250mW -45V
	BC857BLP4-7-B	Trans GP BJT PNP 45V 0.1A 3-Pin DFN-H4 T/R (Alt: BC857BLP4-7B)
	BC857BLP4-7	Bipolar Transistors - BJT 250mW -45V
	BC857BLP4-7B	Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K

BC857BLP4