BC857CWT1

BC857CWT1G vs BC857CWT1 vs BC857CWT1 / 3G

 
PartNumberBC857CWT1GBC857CWT1BC857CWT1 / 3G
DescriptionBipolar Transistors - BJT 100mA 50V PNPTRANS PNP 45V 0.1A SOT-323
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-70-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 45 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.65 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesBC857CW--
Height0.85 mm--
Length2.1 mm--
PackagingReel--
Width1.24 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.1 A--
DC Collector/Base Gain hfe Min270--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000219 oz--
Hersteller Teil # Beschreibung RFQ
BC857CWT1G Bipolar Transistors - BJT 100mA 50V PNP
BC857CWT1 / 3G Neu und Original
ON Semiconductor
ON Semiconductor
BC857CWT1G Bipolar Transistors - BJT 100mA 50V PNP
BC857CWT1 TRANS PNP 45V 0.1A SOT-323
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