BC858AWT

BC858AWT1G vs BC858AWT1 vs BC858AWTIG

 
PartNumberBC858AWT1GBC858AWT1BC858AWTIG
DescriptionBipolar Transistors - BJT 100mA 30V PNPBipolar Transistors - BJT 100mA 30V PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-70-3SC-70-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 30 V- 30 V-
Collector Base Voltage VCBO- 30 V- 30 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage- 0.65 V- 0.65 V-
Maximum DC Collector Current0.1 A0.1 A-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC858AW--
Height0.85 mm0.85 mm-
Length2.1 mm2.1 mm-
PackagingReelReel-
Width1.24 mm1.24 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 0.1 A- 0.1 A-
DC Collector/Base Gain hfe Min9090-
Pd Power Dissipation150 mW150 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000219 oz0.000219 oz-
Hersteller Teil # Beschreibung RFQ
BC858AWT1G Bipolar Transistors - BJT 100mA 30V PNP
BC858AWTIG Neu und Original
ON Semiconductor
ON Semiconductor
BC858AWT1 Bipolar Transistors - BJT 100mA 30V PNP
BC858AWT1G Bipolar Transistors - BJT 100mA 30V PNP
BC858AWT1 TRANS PNP 30V 0.1A SOT-323
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