BC858BWT

BC858BWT106 vs BC858BWT/R7 vs BC858BWT/R13

 
PartNumberBC858BWT106BC858BWT/R7BC858BWT/R13
DescriptionBipolar Transistors - BJT PNP 30V 1MATrans GP BJT PNP 30V 0.1A 3-Pin SOT-323 T/R (Alt: BC858BW_R1_00001)Trans GP BJT PNP 30V 0.1A 3-Pin SOT-323 T/R (Alt: BC858BW_R2_00001)
ManufacturerROHM Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 30 V--
Collector Base Voltage VCBO- 30 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.6 V--
Maximum DC Collector Current0.1 A--
Gain Bandwidth Product fT250 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesBC858BW--
DC Current Gain hFE Max480--
Height0.8 mm--
Length2 mm--
PackagingReel--
Width1.25 mm--
BrandROHM Semiconductor--
Continuous Collector Current- 0.1 A--
DC Collector/Base Gain hfe Min210--
Pd Power Dissipation350 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesBC858BW--
Unit Weight0.000176 oz--
Hersteller Teil # Beschreibung RFQ
BC858BWT106 Bipolar Transistors - BJT PNP 30V 1MA
BC858BWT1G Bipolar Transistors - BJT 100mA 30V PNP
BC858BWT/R7 Trans GP BJT PNP 30V 0.1A 3-Pin SOT-323 T/R (Alt: BC858BW_R1_00001)
BC858BWT/R13 Trans GP BJT PNP 30V 0.1A 3-Pin SOT-323 T/R (Alt: BC858BW_R2_00001)
BC858BWT106 TRANS PNP 30V 0.1A SOT-323
BC858BWT106 , MAX6632UT Neu und Original
BC858BWT1TG Neu und Original
ON Semiconductor
ON Semiconductor
BC858BWT1 Bipolar Transistors - BJT 100mA 30V PNP
BC858BWT1G Bipolar Transistors - BJT 100mA 30V PNP
BC858BWT1 TRANS PNP 30V 0.1A SOT-323
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