BC859CL

BC859CLT1 vs BC859CLT1G

 
PartNumberBC859CLT1BC859CLT1G
DescriptionBipolar Transistors - BJT 100mA 30V PNPBipolar Transistors - BJT 100mA 30V PNP
ManufacturerON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSNY
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3
Transistor PolarityPNPPNP
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max- 30 V- 30 V
Collector Base Voltage VCBO- 30 V- 30 V
Emitter Base Voltage VEBO5 V5 V
Collector Emitter Saturation Voltage- 0.65 V- 0.65 V
Maximum DC Collector Current0.1 A0.1 A
Gain Bandwidth Product fT100 MHz100 MHz
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Height0.94 mm0.94 mm
Length2.9 mm2.9 mm
PackagingReelReel
Width1.3 mm1.3 mm
BrandON SemiconductorON Semiconductor
Continuous Collector Current- 0.1 A- 0.1 A
DC Collector/Base Gain hfe Min420420
Pd Power Dissipation225 mW225 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity30003000
SubcategoryTransistorsTransistors
Unit Weight0.000282 oz0.000282 oz
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
BC859CLT1 Bipolar Transistors - BJT 100mA 30V PNP
BC859CLT1G Bipolar Transistors - BJT 100mA 30V PNP
BC859CLT1 TRANS PNP 30V 0.1A SOT-23
BC859CLT1G TRANS PNP 30V 0.1A SOT-23
BC859CLT116 Neu und Original
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