 |  | | |
| PartNumber | BCR48PNH6327XTSA1 | BCR48PNH6327XTSA1930 | BCR48PNH6433 |
| Description | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS | - Bulk (Alt: BCR48PNH6327XTSA1930) | - Bulk (Alt: BCR48PNH6433) |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | Bipolar Transistors - Pre-Biased | - | Transistors (BJT) - Arrays, Pre-Biased |
| Package / Case | SOT-363-6 | - | - |
| Packaging | Reel | - | Tape & Reel (TR) Alternate Packaging |
| Brand | Infineon Technologies | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 48PN BCR BCR48PNH6327XT H6327 SP000757930 | - | - |
| Series | - | - | - |
| Package Case | - | - | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-SOT363-6 |
| Power Max | - | - | 250mW |
| Transistor Type | - | - | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current Collector Ic Max | - | - | 70mA, 100mA |
| Voltage Collector Emitter Breakdown Max | - | - | 50V |
| Resistor Base R1 Ohms | - | - | 47k, 2.2k |
| Resistor Emitter Base R2 Ohms | - | - | 47k |
| DC Current Gain hFE Min Ic Vce | - | - | 70 @ 5mA, 5V |
| Vce Saturation Max Ib Ic | - | - | 300mV @ 500μA, 10mA |
| Current Collector Cutoff Max | - | - | - |
| Frequency Transition | - | - | 100MHz, 200MHz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BCR48PNH6433XTMA1 | Bipolar Transistors - Pre-Biased AF DIG TRANSISTORS | |
| BCR48PNH6327XTSA1930 | - Bulk (Alt: BCR48PNH6327XTSA1930) | ||
| BCR48PNH6433 | - Bulk (Alt: BCR48PNH6433) | ||
| BCR48PNH6433XTMA1 | TRANS NPN/PNP PREBIAS SOT363 | ||
| BCR48PNH6327XTSA1 | TRANS NPN/PNP PREBIAS SOT363 | ||
Infineon Technologies |
BCR48PNH6327XTSA1 | Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTORS | |
| BCR48PNH6327 | Small Signal Bipolar Transistor, 0.07A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon |