 |  | | |
| PartNumber | BCW65CLT1G | BCW65C/EC | BCW65CE6327 |
| Description | Bipolar Transistors - BJT 100mA 60V NPN | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 32 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.7 V | - | - |
| Maximum DC Collector Current | 0.8 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCW65AL | - | - |
| Height | 0.94 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.8 A | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Pd Power Dissipation | 225 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| BCW65CLT1G | Bipolar Transistors - BJT 100mA 60V NPN | ||
| BCW65C/EC | Neu und Original | ||
| BCW65CE6327 | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | ||
| BCW65CTA | Bipolar Transistors - BJT | ||
| BCW65CTR | Neu und Original | ||
| BCW65CLT1G-CUT TAPE | Neu und Original | ||
ON Semiconductor |
BCW65C | Bipolar Transistors - BJT SOT-23 NPN GP AMP | |
| BCW65C , MAX1916ZT | Neu und Original | ||
| BCW65CLT1 | TRANS NPN 32V 0.8A SOT-23 | ||
| BCW65CLT1G | Bipolar Transistors - BJT 100mA 60V NPN | ||
Infineon Technologies |
BCW65C E6327 | Neu und Original |