 |  | |
| PartNumber | BCX55H6327XTSA1 | BCX55H6327 |
| Description | Bipolar Transistors - BJT AF TRANSISTORS | |
| Manufacturer | Infineon | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-89-4 | - |
| Transistor Polarity | NPN | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 60 V | - |
| Collector Base Voltage VCBO | 60 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Collector Emitter Saturation Voltage | 0.5 V | - |
| Maximum DC Collector Current | 1.5 A | - |
| Gain Bandwidth Product fT | 100 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| DC Current Gain hFE Max | 250 | - |
| Packaging | Reel | - |
| Brand | Infineon Technologies | - |
| Continuous Collector Current | 1 A | - |
| DC Collector/Base Gain hfe Min | 40 | - |
| Pd Power Dissipation | 2 W | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 55 BCX H6327 SP001125470 | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BCX55H6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTORS | |
| BCX55H6327 | Neu und Original | ||
| BCX55H6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTORS |