 |  | | |
| PartNumber | BD239C | BD239C-S | BD239C. |
| Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | TRANS NPN 100V 2A | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 115 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.7 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BD239C | - | - |
| Height | 9.4 mm | - | - |
| Length | 10.1 mm | - | - |
| Packaging | Bulk | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 2 A | - | - |
| DC Collector/Base Gain hfe Min | 15 | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1200 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
BD239C | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | |
| BD239CTU | Bipolar Transistors - BJT NPN Epitaxial Sil | ||
Bourns |
BD239C-S | TRANS NPN 100V 2A | |
ON Semiconductor |
BD239C. | Neu und Original | |
| BD239CTU | TRANS NPN 100V 2A TO-220 | ||
STMicroelectronics |
BD239C | Bipolar Transistors - BJT NPN Pwr Transistors |