BDC01D

BDC01DRL1G vs BDC01D vs BDC01DRL1

 
PartNumberBDC01DRL1GBDC01DBDC01DRL1
DescriptionBipolar Transistors - BJT 1.5A 100V NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.7 V--
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Height7.87 mm--
Length5.21 mm--
PackagingBulk--
Width4.19 mm--
BrandON Semiconductor--
Continuous Collector Current0.5 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity5000--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
BDC01DRL1G Bipolar Transistors - BJT 1.5A 100V NPN
BDC01D Neu und Original
BDC01DRL1 Neu und Original
BDC01DRL1G TRANS NPN 100V 0.5A TO-92
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