 |  | | |
| PartNumber | BF824W,135 | BF824W | BF824W135 |
| Description | Bipolar Transistors - BJT TRANS MED FREQ | RF Small Signal Bipolar Transistor, 1-Element, Silicon, PNP | |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 30 V | - | - |
| Collector Base Voltage VCBO | 30 V | - | - |
| Emitter Base Voltage VEBO | 4 V | - | - |
| Maximum DC Collector Current | 0.025 A | - | - |
| Gain Bandwidth Product fT | 400 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 25 at 1 mA, 10 V | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.35 mm | - | - |
| Brand | Nexperia | - | - |
| DC Collector/Base Gain hfe Min | 25 at 1 mA, 10 V, 25 at 4 mA, 10 V | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | /T3 BF824W | - | - |
| Unit Weight | 0.000176 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BF824W,135 | Bipolar Transistors - BJT TRANS MED FREQ | |
| BF824W,135 | TRANS PNP 30V 0.025A SOT323 | ||
NXP Semiconductors |
BF824W | RF Small Signal Bipolar Transistor, 1-Element, Silicon, PNP | |
| BF824W135 | Neu und Original |