 |  | | |
| PartNumber | BFG35,115 | BFG35 | BFG35115 |
| Description | RF Bipolar Transistors NPN 10V 150mA 4GHZ | ||
| Manufacturer | NXP | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| Collector Emitter Voltage VCEO Max | 18 V | - | - |
| Emitter Base Voltage VEBO | 2 V | - | - |
| Continuous Collector Current | 0.15 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 25 V | - | - |
| DC Current Gain hFE Max | 25 | - | - |
| Height | 1.7 mm | - | - |
| Length | 6.7 mm | - | - |
| Operating Frequency | 4000 MHz | - | - |
| Type | RF Bipolar Small Signal | - | - |
| Width | 3.7 mm | - | - |
| Brand | NXP Semiconductors | - | - |
| Gain Bandwidth Product fT | 4000 MHz | - | - |
| Maximum DC Collector Current | 0.15 A | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 933919910115 | - | - |
| Unit Weight | 0.003527 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
NXP Semiconductors |
BFG35,115 | RF Bipolar Transistors NPN 10V 150mA 4GHZ | |
| BFG35 | Neu und Original | ||
| BFG35115 | Neu und Original | ||
| BFG35,115 | RF Bipolar Transistors NPN 10V 150mA 4GHZ | ||
| BFG35,115-CUT TAPE | Neu und Original |