BFR31

BFR31,215 vs BFR31,235 vs BFR31

 
PartNumberBFR31,215BFR31,235BFR31
DescriptionJFET TAPE7 FET-RFSSRF JFET Transistors N-Channel Single '+/- 25V 5mAJFET, N CHANNEL, 25V, 0.005A, SOT-23, Breakdown Voltage Vbr:-, Zero Gate Voltage Drain Current Idss Min:1A, Zero Gate Voltage Drain Current Idss Max:5mA, Gate-Source Cutoff Voltage Vgs(off) Max:-2
ManufacturerNXPNXP-
Product CategoryJFETRF JFET Transistors-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23SOT-23-
Transistor PolarityN-ChannelN-Channel-
ConfigurationSingleSingle-
Vds Drain Source Breakdown Voltage25 V25 V-
Vgs Gate Source Breakdown Voltage- 25 V25 V-
Drain Source Current at Vgs=01 mA--
Id Continuous Drain Current5 mA5 mA-
Pd Power Dissipation250 mW250 mW-
Maximum Operating Temperature+ 150 C--
PackagingReelReel-
Height1 mm--
Length3 mm--
TypeJFETJFET-
Width1.4 mm--
BrandNXP SemiconductorsNXP Semiconductors-
Gate Source Cutoff Voltage- 2.5 V--
Maximum Drain Gate Voltage- 25 V--
Factory Pack Quantity300010000-
Part # Aliases933163490215933163490235-
Unit Weight0.000282 oz0.000282 oz-
Transistor Type-JFET-
Technology-Si-
Product-RF JFET-
Product Type-RF JFET Transistors-
Subcategory-Transistors-
Hersteller Teil # Beschreibung RFQ
NXP Semiconductors
NXP Semiconductors
BFR31,215 JFET TAPE7 FET-RFSS
BFR31,235 RF JFET Transistors N-Channel Single '+/- 25V 5mA
BFR31 JFET, N CHANNEL, 25V, 0.005A, SOT-23, Breakdown Voltage Vbr:-, Zero Gate Voltage Drain Current Idss Min:1A, Zero Gate Voltage Drain Current Idss Max:5mA, Gate-Source Cutoff Voltage Vgs(off) Max:-2
BFR31-215 Neu und Original
BFR31215 Small Signal Field-Effect Transistor 0.01A I(D) 25V, 1-Element, N-Channel
BFR31T/R Neu und Original
BFR31,235 RF JFET Transistors N-Channel Single '+/- 25V 5mA
ON Semiconductor
ON Semiconductor
BFR31LT1G JFET 25V 10mA
BFR31LT1 JFET 25V 10mA
BFR31LT1 JFET N-CH 225MW SOT23
BFR31LT1G JFET N-CH 225MW SOT23
BFR31 T/R RF Bipolar Transistors TAPE7 FET-RFSS
BFR31.215 Transistor: N-JFET, unipolar, 5mA, 250mW, SOT23, Igt:5mA
BFR31,215-CUT TAPE Neu und Original
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