 | |  | |
| PartNumber | BFU520AR | BFU520AVL | BFU520A |
| Description | RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor | RF Bipolar Transistors NPN wideband silicon RF transistor | |
| Manufacturer | NXP | NXP | NXP Semiconductors |
| Product Category | RF Bipolar Transistors | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | Y | - |
| Transistor Type | Bipolar Wideband | - | NPN |
| Technology | Si | Si | Si |
| Transistor Polarity | NPN | - | NPN |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Collector Emitter Voltage VCEO Max | 16 V | - | - |
| Emitter Base Voltage VEBO | 2 V | - | - |
| Continuous Collector Current | 5 mA | - | 5 mA |
| Minimum Operating Temperature | - 40 C | - | - 40 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Configuration | Single | - | Dual |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-23-3 | - | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Collector Base Voltage VCBO | 24 V | - | - |
| DC Current Gain hFE Max | 200 | - | - |
| Operating Frequency | 900 MHz | - | 900 MHz |
| Operating Temperature Range | - 40 C to + 150 C | - | - |
| Type | Wideband RF Transistor | - | - |
| Brand | NXP Semiconductors | NXP Semiconductors | - |
| Gain Bandwidth Product fT | 10 GHz | - | - |
| Maximum DC Collector Current | 50 mA | - | 50 mA |
| Pd Power Dissipation | 450 mW | - | - |
| Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 10000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 934067697215 | 934067697235 | - |
| Unit Weight | 0.000266 oz | 0.000266 oz | 0.000310 oz |
| Series | - | - | Automotive, AEC-Q101 |
| Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-23 (TO-236AB) |
| Power Max | - | - | 450mW |
| Current Collector Ic Max | - | - | 30mA |
| Voltage Collector Emitter Breakdown Max | - | - | 12V |
| DC Current Gain hFE Min Ic Vce | - | - | 60 @ 5mA, 8V |
| Frequency Transition | - | - | 10GHz |
| Noise Figure dB Typ f | - | - | 0.7dB @ 900MHz |
| Gain | - | - | 18dB |
| Pd Power Dissipation | - | - | 450 mW |
| Collector Emitter Voltage VCEO Max | - | - | 16 V |
| Emitter Base Voltage VEBO | - | - | 2 V |
| DC Collector Base Gain hfe Min | - | - | 60 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
NXP Semiconductors |
BFU520AR | RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor | |
| BFU520AVL | RF Bipolar Transistors NPN wideband silicon RF transistor | ||
| BFU520A | Neu und Original | ||
| BFU520AVL | RF Bipolar Transistors NPN wideband silicon RF transisto | ||
| BFU520AR | RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto | ||
| BFU520AR-CUT TAPE | Neu und Original |