PartNumber | BFU730F,115 | BFU730F+115 | BFU730F |
Description | RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS | - Bulk (Alt: BFU730F115) | |
Manufacturer | NXP | - | NXP |
Product Category | RF Bipolar Transistors | - | IC Chips |
RoHS | Y | - | - |
Transistor Type | Bipolar | - | - |
Technology | SiGe | - | - |
DC Collector/Base Gain hfe Min | 205 | - | - |
Collector Emitter Voltage VCEO Max | 2.8 V | - | - |
Emitter Base Voltage VEBO | 1 V | - | - |
Continuous Collector Current | 5 mA | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT343F-4 | - | - |
Packaging | Reel | - | - |
Collector Base Voltage VCBO | 10 V | - | - |
DC Current Gain hFE Max | 555 | - | - |
Height | 0.75 mm | - | - |
Length | 2.2 mm | - | - |
Operating Frequency | 55 GHz | - | - |
Type | RF Silicon Germanium | - | - |
Width | 1.35 mm | - | - |
Brand | NXP Semiconductors | - | - |
Pd Power Dissipation | 197 mW | - | - |
Product Type | RF Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | 934064614115 | - | - |
Unit Weight | 0.000235 oz | - | - |