 |  |  | |
| PartNumber | BGA524N6E6327XTSA1 | BGA524N6BOARDTOBO1 | BGA524N6 |
| Description | RF Amplifier RF SILICON MMIC | RF Development Tools | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | RF Amplifier | RF Development Tools | - |
| RoHS | Y | N | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSNP-6 | - | - |
| Type | GNSS | - | - |
| Technology | SiGe | - | - |
| Operating Frequency | 1550 MHz to 1615 MHz | - | - |
| P1dB Compression Point | - 12 dBm | - | - |
| Gain | 19.6 dB | - | - |
| Operating Supply Voltage | 3.3 V | - | - |
| NF Noise Figure | 0.55 dB | - | - |
| OIP3 Third Order Intercept | - 4 dBm | - | - |
| Operating Supply Current | 2.5 mA | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Isolation dB | 37 dB | - | - |
| Pd Power Dissipation | 60 mW | - | - |
| Product Type | RF Amplifier | RF Development Tools | - |
| Factory Pack Quantity | 15000 | 1 | - |
| Subcategory | Wireless & RF Integrated Circuits | Development Tools | - |
| Part # Aliases | 524N6 BGA E6327 SP001088394 | SP001126352 | - |
| Unit Weight | 0.000035 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BGA524N6E6327XTSA1 | RF Amplifier RF SILICON MMIC | |
| BGA524N6 | Neu und Original | ||
| BGA524N6BOARDTOBO1 | BGA524N6 Silicon Germanium Low Noise Amplifier Development Board (Alt: SP001126352) | ||
| BGA524N6E6327XTSA1 | IC AMP GPS 1.55-1.615GHZ TSNP6-2 | ||
Infineon Technologies |
BGA524N6BOARDTOBO1 | RF Development Tools | |
| BGA5235FT(E) | Neu und Original | ||
| BGA524N6 E6327 | Neu und Original | ||
| BGA524N6/BGA725/BGA824 | Neu und Original | ||
| BGA524N6E6327 | Silicon Germanium Low Noise Amp For GNSS | ||
| BGA524N6E6327. | Neu und Original | ||
| BGA524N6E6327XTSA1-CUT TAPE | Neu und Original |