PartNumber | BLA6G1011LS-200RG | BLA6G1011LS-200RG11 | BLA6G1011LS-200RG, |
Description | BLA6G1011LS-200RG/SOT | Now Ampleon, BLA6G1011LS-200RG, Power LDMOS transistor, SOT502 (LDMOST) | RF MOSFET Transistors PWR LDMOS TRANSISTOR |
Manufacturer | - | - | |
Product Category | - | - | RF FETs |
RoHS | - | - | Details |
Transistor Polarity | - | - | N-Channel |
Id Continuous Drain Current | - | - | 49 A |
Vds Drain Source Breakdown Voltage | - | - | 65 V |
Rds On Drain Source Resistance | - | - | 930 mOhms |
Technology | - | - | Si |
Gain | - | - | 20 dB |
Output Power | - | - | 200 W |
Maximum Operating Temperature | - | - | + 150 C |
Mounting Style | - | - | SMD/SMT |
Package / Case | - | - | SOT-502C-3 |
Packaging | - | - | Tube |
Brand | - | - | NXP Semiconductors |
Operating Frequency | - | - | 1.03 GHz to 1.09 GHz |
Type | - | - | RF Power MOSFET |
Vgs Gate Source Voltage | - | - | 13 V |
Vgs th Gate Source Threshold Voltage | - | - | 2 V |