 |  | | |
| PartNumber | BSB280N15NZ3 G | BSB280N15NZ3GXT | BSB280N15NZ3G |
| Description | MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3 | Trans MOSFET N-CH 150V 9A 7-Pin WDSON - Tape and Reel (Alt: BSB280N15NZ3GXUMA1) | Power Field-Effect Transistor, 9A I(D), 150V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | WDSON-2-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 28 mOhms | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 0.7 mm | - | - |
| Length | 6.35 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.05 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | BSB280N15NZ3GXUMA1 BSB28N15NZ3GXT SP000604534 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSB280N15NZ3 G | MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3 | |
| BSB280N15NZ3GXUMA1 | MOSFET N-CH 150V 9A WDSON-2 | ||
Infineon Technologies |
BSB280N15NZ3GXUMA1 | MOSFET MV POWER MOS | |
| BSB280N15NZ3GXT | Trans MOSFET N-CH 150V 9A 7-Pin WDSON - Tape and Reel (Alt: BSB280N15NZ3GXUMA1) | ||
| BSB280N15NZ3G | Power Field-Effect Transistor, 9A I(D), 150V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSB280N15NZ3 G | RF Bipolar Transistors MOSFET N-Ch 150V 30A CanPAK3 MZ OptiMOS 3 |