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| PartNumber | BSC010NE2LS | BSC010NE2LSI | BSC010NE2LSATMA1 |
| Description | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | PG-TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V | 25 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 1 mOhms | 1.05 mOhms | 800 uOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 64 nC | 59 nC | 85 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 96 W | 96 W | 96 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 85 S | 80 S | 85 S |
| Fall Time | 4.4 ns | 4.6 ns | 4.4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6 ns | 6.2 ns | 6 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | 32 ns | 34 ns |
| Typical Turn On Delay Time | 6.7 ns | 6.3 ns | 6.7 ns |
| Part # Aliases | BSC010NE2LSATMA1 BSC1NE2LSXT SP000776124 | BSC010NE2LSIATMA1 BSC1NE2LSIXT SP000854376 | BSC010NE2LS BSC1NE2LSXT SP000776124 |
| Unit Weight | 0.003527 oz | 0.007055 oz | 0.010582 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC010NE2LS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | |
| BSC010NE2LSI | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC010NE2LSATMA1 | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC010NE2LSIATMA1 | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC010NE2LSATMA1 | MOSFET N-CH 25V 39A TDSON-8 | ||
| BSC010NE2LSIATMA1 | MOSFET N-CH 25V 38A TDSON-8 | ||
| BSC010NE2LS | Trans MOSFET N-CH 25V 39A 8-Pin TDSON T/R (Alt: BSC010NE2LS) | ||
| BSC010NE2LS , TDA1517P/N | Neu und Original | ||
| BSC010NE2LSG | Neu und Original | ||
| BSC010NE2LSI | Trans MOSFET P-CH 25V 38A 8-Pin TDSON EP | ||
| BSC010NE2LSS | Neu und Original |