BSC016N04

BSC016N04LS G vs BSC016N04LS vs BSC016N04LSG

 
PartNumberBSC016N04LS GBSC016N04LSBSC016N04LSG
DescriptionMOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET
ManufacturerInfineonINFINEONINFINEON
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance1.3 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge150 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation139 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min95 S--
Fall Time9.4 ns--
Product TypeMOSFET--
Rise Time7.6 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time56 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesBSC016N04LSGATMA1 BSC16N4LSGXT SP000394801--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
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