BSC024

BSC024NE2LSATMA1 vs BSC024NE2LS vs BSC024N025S G

 
PartNumberBSC024NE2LSATMA1BSC024NE2LSBSC024N025S G
DescriptionMOSFET N-Ch 25V 100A TDSON-8 OptiMOSMOSFET N-Ch 25V 100A TDSON-8 OptiMOSMOSFET N-CH 25V 100A TDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8PG-TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance2 mOhms2.4 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge23 nC23 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation48 W48 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min55 S55 S-
Fall Time2.6 ns2.6 ns-
Product TypeMOSFETMOSFET-
Rise Time3.6 ns3.6 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time4.1 ns4.1 ns-
Part # AliasesBSC024NE2LS BSC24NE2LSXT SP000756342BSC024NE2LSATMA1 BSC24NE2LSXT SP000756342-
Unit Weight0.004159 oz0.006702 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSC024NE2LSATMA1 MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC024NE2LS MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC024NE2LSXT MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC024NE2LSATMA1 MOSFET N-CH 25V 25A TDSON-8
BSC024N025S G MOSFET N-CH 25V 100A TDSON-8
BSC024N025SG Neu und Original
BSC024NE2LS Trans MOSFET N-CH 25V 25A 8-Pin TDSON T/R (Alt: BSC024NE2LS)
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