PartNumber | BSC024NE2LSATMA1 | BSC024NE2LS | BSC024N025S G |
Description | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | MOSFET N-CH 25V 100A TDSON-8 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TDSON-8 | PG-TDSON-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
Id Continuous Drain Current | 100 A | 100 A | - |
Rds On Drain Source Resistance | 2 mOhms | 2.4 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Qg Gate Charge | 23 nC | 23 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 48 W | 48 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 1.27 mm | 1.27 mm | - |
Length | 5.9 mm | 5.9 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 55 S | 55 S | - |
Fall Time | 2.6 ns | 2.6 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.6 ns | 3.6 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 19 ns | 19 ns | - |
Typical Turn On Delay Time | 4.1 ns | 4.1 ns | - |
Part # Aliases | BSC024NE2LS BSC24NE2LSXT SP000756342 | BSC024NE2LSATMA1 BSC24NE2LSXT SP000756342 | - |
Unit Weight | 0.004159 oz | 0.006702 oz | - |