 |  | | |
| PartNumber | BSC029N025S G | BSC029N025SG | BSC029N025SGATMA1 |
| Description | MOSFET N-Ch 25V 24A TDSON-8 | Power Field-Effect Transistor, 24A I(D), 25V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | - | |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 24 A | - | - |
| Rds On Drain Source Resistance | 2.9 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 6 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 7.5 ns | - | - |
| Part # Aliases | BSC029N025SGXT | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC029N025S G | MOSFET N-Ch 25V 24A TDSON-8 | |
Infineon Technologies |
BSC029N025S G | MOSFET N-CH 25V 100A TDSON-8 | |
| BSC029N025SG | Power Field-Effect Transistor, 24A I(D), 25V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC029N025SGATMA1 | Neu und Original |