BSC042NE7NS3

BSC042NE7NS3 G vs BSC042NE7NS3GATMA1

 
PartNumberBSC042NE7NS3 GBSC042NE7NS3GATMA1
DescriptionMOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage75 V75 V
Id Continuous Drain Current100 A100 A
Rds On Drain Source Resistance3.7 mOhms3.7 mOhms
Vgs th Gate Source Threshold Voltage2.3 V2.3 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge69 nC69 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation125 W125 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height1.27 mm1.27 mm
Length5.9 mm5.9 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
TypeOptiMOS 3 Power-Transistor-
Width5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min44 S44 S
Fall Time9 ns9 ns
Product TypeMOSFETMOSFET
Rise Time17 ns17 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time34 ns34 ns
Typical Turn On Delay Time14 ns14 ns
Part # AliasesBSC042NE7NS3GATMA1 BSC42NE7NS3GXT SP000657440BSC042NE7NS3 BSC42NE7NS3GXT G SP000657440
Unit Weight0.003527 oz0.004293 oz
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSC042NE7NS3 G MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
BSC042NE7NS3GATMA1 MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
BSC042NE7NS3 G Trans MOSFET N-CH 75V 19A 8-Pin TDSON T/R (Alt: BSC042NE7NS3 G)
BSC042NE7NS3GATMA1 MOSFET N-CH 75V 100A TDSON-8
BSC042NE7NS3 Neu und Original
BSC042NE7NS3G Trans MOSFET N-CH 75V 19A 8-Pin TDSON EP
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