 | | | |
| PartNumber | BSC0923NDI | BSC0921NDI | BSC0921NDIATMA1 |
| Description | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | MOSFET N-Ch 30V,30V 40A,40A TISON-8 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TISON-8 | TISON-8 | TISON-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 40 A | 40 A | 40 A |
| Rds On Drain Source Resistance | 3.8 mOhms, 2.1 mOhms | 3.9 mOhms, 1.2 mOhms | 3.9 mOhms, 1.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 10 nC, 18.4 nC | 8.9 nC, 33 nC | 8.9 nC, 33 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W | 2.5 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 32 S, 43 S | 38 S, 70 S | 38 S, 70 S |
| Fall Time | 3 ns, 2.6 ns | 2.4 ns, 3.6 ns | 2.4 ns, 3.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3.8 ns, 3.6 ns | 3.4 ns, 5 ns | 3.4 ns, 5 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 17 ns, 19 ns | 12 ns, 25 ns | 12 ns, 25 ns |
| Typical Turn On Delay Time | 4.7 ns, 4.1 ns | 1.8 ns, 5 ns | 1.8 ns, 5 ns |
| Part # Aliases | BSC0923NDIATMA1 BSC923NDIXT SP000934758 | BSC0921NDIATMA1 BSC921NDIXT SP000934748 | BSC0921NDI BSC921NDIXT SP000934748 |
| Unit Weight | - | 0.003584 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC0925ND | MOSFET N-Ch 30V 40A TISON-8 | |
| BSC0923NDI | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | ||
| BSC0921NDI | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | ||
| BSC0921NDIATMA1 | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | ||
| BSC0924NDI | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | ||
| BSC0923NDIATMA1 | MOSFET 2N-CH 30V 17A/32A TISON8 | ||
| BSC0924NDIATMA1 | MOSFET 2N-CH 30V 17A/32A TISON8 | ||
| BSC0925NDATMA1 | MOSFET 2N-CH 30V 15A TISON8 | ||
| BSC0921NDIATMA1 | RF Bipolar Transistors MOSFET N-Ch 30V,30V 40A,40A TISON-8 | ||
Infineon Technologies |
BSC0923NDIATMA1 | MOSFET LV POWER MOS | |
| BSC0924NDIATMA1 | MOSFET LV POWER MOS | ||
| BSC0925NDATMA1 | MOSFET LV POWER MOS | ||
| BSC0921NDI | Trans MOSFET N-CH 30V 17A/31A 8-Pin TISON EP T/R (Alt: BSC0921NDI) | ||
| BSC0923NDI | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | ||
| BSC0923NDI , TDZ TR 24 , | Neu und Original | ||
| BSC0924NDI | MOSFET N-Ch 30V,30V 40A,40A TISON-8 | ||
| BSC0924NDI , TDZ TR 5.1 | Neu und Original | ||
| BSC0925ND | MOSFET N-Ch 30V 40A TISON-8 |