 |  | |
| PartNumber | BSD214SNH6327XTSA1 | BSD214SNH6327 |
| Description | MOSFET SMALL SIGNAL+P-CH | - Bulk (Alt: BSD214SNH6327) |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-363-6 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 1.5 A | - |
| Rds On Drain Source Resistance | 111 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 700 mV | - |
| Vgs Gate Source Voltage | 12 V | - |
| Qg Gate Charge | 800 pC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 0.9 mm | - |
| Length | 2 mm | - |
| Series | BSD214 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 1.25 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 4 S | - |
| Fall Time | 1.4 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 7.8 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 6.8 ns | - |
| Typical Turn On Delay Time | 4.1 ns | - |
| Part # Aliases | BSD214SN BSD214SNH6327XT H6327 SP000917656 | - |
| Unit Weight | 0.000265 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSD214SNH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSD214SNH6327XTSA1 | MOSFET N-CH 20V 1.5A SOT363 | ||
| BSD214SNH6327 | - Bulk (Alt: BSD214SNH6327) |