 |  | | |
| PartNumber | BSG0810NDIATMA1 | BSG0810ND | BSG0810NDI |
| Description | MOSFET LV POWER MOS | ||
| Manufacturer | Infineon | INFINEON | INFINEON |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TISON-8 | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Tape & Reel (TR) | Tape & Reel (TR) |
| Height | 1.15 mm | - | - |
| Length | 6 mm | - | - |
| Series | OptiMOS 5 | OptiMOS | OptiMOS |
| Width | 5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | BSG0810NDI SP001241674 | - | - |
| Part Aliases | - | BSG0810NDI SP001241674 | BSG0810NDI SP001241674 |
| Package Case | - | 8-PowerTDFN | 8-PowerTDFN |
| Operating Temperature | - | -55°C ~ 155°C (TJ) | -55°C ~ 155°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | PG-TISON-8 | PG-TISON-8 |
| FET Type | - | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual) Asymmetrical |
| Power Max | - | 2.5W | 2.5W |
| Drain to Source Voltage Vdss | - | 25V | 25V |
| Input Capacitance Ciss Vds | - | * | * |
| FET Feature | - | Logic Level Gate, 4.5V Drive | Logic Level Gate, 4.5V Drive |
| Current Continuous Drain Id 25°C | - | 19A, 39A | 19A, 39A |
| Rds On Max Id Vgs | - | 3 mOhm @ 20A, 10V | 3 mOhm @ 20A, 10V |
| Vgs th Max Id | - | 2V @ 250μA | 2V @ 250μA |
| Gate Charge Qg Vgs | - | 8.4nC @ 4.5V | 8.4nC @ 4.5V |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSG0810NDIATMA1 | MOSFET LV POWER MOS | |
| BSG0810NDIATMA1 | MOSFET 2N-CH 25V 19A/39A 8TISON | ||
| BSG0810ND | Neu und Original | ||
| BSG0810NDI | Neu und Original | ||
| BSG0810NDIATMA1-CUT TAPE | Neu und Original |