 | | | |
| PartNumber | BSH202 , MAX6335US22D3 | BSH202+215 | BSH202 |
| Description | Now Nexperia BSH202 - Small Signal Field-Effect Transistor, 0.52A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | MOSFET, P CHANNEL, 30V, 0.52A, SOT23, Transistor Polarity:P Channel, Continuous Drain Current Id:-520mA, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.63ohm, Rds(on) Test Voltage Vgs:-10 | |
| Manufacturer | - | NXP | 10NXP |
| Product Category | - | IC Chips | FETs - Single |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BSH202,215 | MOSFET TAPE7 MOSFET | |
| BSH202,215 | MOSFET P-CH 30V 520MA SOT23 | ||
| BSH202 , MAX6335US22D3 | Neu und Original | ||
| BSH202+215 | Now Nexperia BSH202 - Small Signal Field-Effect Transistor, 0.52A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH202215 | Now Nexperia BSH202 - Small Signal Field-Effect Transistor, 0.52A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSH202 | MOSFET, P CHANNEL, 30V, 0.52A, SOT23, Transistor Polarity:P Channel, Continuous Drain Current Id:-520mA, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.63ohm, Rds(on) Test Voltage Vgs:-10 |