 | | |
| PartNumber | BSH205G2R | BSH205G2VL |
| Description | MOSFET 20V P-channel Trench MOSFET | MOSFET BSH205G2/TO-236AB/REEL 11" Q3/ |
| Manufacturer | Nexperia | Nexperia |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 2.3 A | - |
| Rds On Drain Source Resistance | 170 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - |
| Vgs Gate Source Voltage | 4.5 V | - |
| Qg Gate Charge | 3.7 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 890 mW | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Transistor Type | 1 P-Channel Trench MOSFET | - |
| Brand | Nexperia | Nexperia |
| Fall Time | 16 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 14 ns | - |
| Factory Pack Quantity | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 43 ns | - |
| Typical Turn On Delay Time | 5 ns | - |
| Unit Weight | 0.000282 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
BSH205G2R | MOSFET 20V P-channel Trench MOSFET | |
| BSH205G2VL | MOSFET BSH205G2/TO-236AB/REEL 11" Q3/ | ||
| BSH205G2R | MOSFET P-CH 20V 2A SOT23 | ||
| BSH205G2VL | MOSFET P-CH 20V 2.3A TO236AB | ||
| BSH205G2,215 | Neu und Original | ||
| BSH205G2215 | Now Nexperia BSH205G2 - Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | ||
| BSH205G2 | 20 V, P-CHANNEL TRENCH MOSFET PLASTIC PACAKGE-3 |