BSM150GB120DN

BSM150GB120DN2 vs BSM150GB120DN11 vs BSM150GB120DN2(SCH200)

 
PartNumberBSM150GB120DN2BSM150GB120DN11BSM150GB120DN2(SCH200)
DescriptionIGBT Modules 1200V 150A DUAL
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHalf Bridge--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C210 A--
Gate Emitter Leakage Current320 nA--
Pd Power Dissipation1.25 kW--
Package / CaseHalf Bridge2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height30 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM150GB120DN2HOSA1 SP000095942--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
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