BSM50GAL12

BSM50GAL120DN2 vs BSM50GAL120D vs BSM50GAL120DLC

 
PartNumberBSM50GAL120DN2BSM50GAL120DBSM50GAL120DLC
DescriptionIGBT Modules 1200V 50A CHOPPER
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHalf Bridge--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C78 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation400 W--
Package / CaseHalf Bridge GAL 1--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height30.5 mm--
Length94 mm--
Width34 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM50GAL120DN2HOSA1 SP000101727--
Unit Weight8.818490 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSM50GAL120DN2 IGBT Modules 1200V 50A CHOPPER
BSM50GAL120DN2HOSA1 MEDIUM POWER 34MM
BSM50GAL120D Neu und Original
BSM50GAL120DLC Neu und Original
BSM50GAL120DN2 IGBT Modules 1200V 50A CHOPPER
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