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| PartNumber | BSO201SPHXUMA1 | BSO201SPH |
| Description | MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P | Power Field-Effect Transistor, 9.3A I(D), 20V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SO-8 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 14.9 A | - |
| Rds On Drain Source Resistance | 6.7 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - |
| Vgs Gate Source Voltage | 12 V | - |
| Qg Gate Charge | - 88 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2.5 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 1.75 mm | - |
| Length | 4.9 mm | - |
| Series | BSO201 | - |
| Transistor Type | 1 P-Channel | - |
| Width | 3.9 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 40 S | - |
| Fall Time | 162 ns | - |
| Moisture Sensitive | Yes | - |
| Product Type | MOSFET | - |
| Rise Time | 99 ns | - |
| Factory Pack Quantity | 2500 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 99 ns | - |
| Typical Turn On Delay Time | 21 ns | - |
| Part # Aliases | BSO201SP BSO21SPHXT H SP000613828 | - |
| Unit Weight | 0.019048 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSO201SPHXUMA1 | MOSFET P-Ch -20V -14.9A DSO-8 OptiMOS P | |
| BSO201SPHXUMA1 | MOSFET P-CH 20V 12A 8SOIC | ||
| BSO201SPH | Power Field-Effect Transistor, 9.3A I(D), 20V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |