PartNumber | BSP126,115 | BSP126,135 | BSP122,115 |
Description | MOSFET TAPE-7 MOSFET | MOSFET TAPE13 MOSFET | MOSFET TAPE-7 MOSFET |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-3 | SOT-223-3 | SOT-223-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 250 V | 250 V | 200 V |
Id Continuous Drain Current | 375 mA | 375 mA | 550 mA |
Rds On Drain Source Resistance | 2.8 Ohms | 5 Ohms | 1.7 Ohms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.5 W | 1.5 W | 1.5 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 1.7 mm | 1.7 mm | 1.7 mm |
Length | 6.7 mm | 6.7 mm | 6.7 mm |
Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 3.7 mm | 3.7 mm | 3.7 mm |
Brand | Nexperia | Nexperia | Nexperia |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 4000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | BSP126 T/R | /T3 BSP126 | BSP122 T/R |
Unit Weight | 0.008818 oz | 0.008818 oz | 0.008818 oz |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
Nexperia |
BSP126,115 | MOSFET TAPE-7 MOSFET | |
BSP126,135 | MOSFET TAPE13 MOSFET | ||
BSP122,115 | MOSFET TAPE-7 MOSFET | ||
BSP122,115 | MOSFET N-CH 200V 0.55A SOT223 | ||
BSP126,115 | MOSFET N-CH 250V 375MA SOT223 | ||
BSP126,135 | RF Bipolar Transistors MOSFET TAPE13 MOSFET | ||
Infineon Technologies |
BSP125 H6433 | MOSFET N-Ch 600V 120mA SOT-223-3 | |
BSP125H6433XTMA1 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
BSP125H6327XTSA1 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
BSP125 H6327 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
BSP123E6327T | MOSFET N-CH 100V 370MA SOT223 | ||
BSP123L6327HTSA1 | MOSFET N-CH 100V 370MA SOT223 | ||
BSP125L6327HTSA1 | MOSFET N-CH 600V 120MA SOT-223 | ||
BSP125L6433HTMA1 | MOSFET N-CH 600V 120MA SOT-223 | ||
BSP125 E6327 | MOSFET N-CH 600V 120MA SOT-223 | ||
BSP125 E6433 | MOSFET N-CH 600V 120MA SOT-223 | ||
BSP125H6433XTMA1 | IGBT Transistors MOSFET N-Ch 600V 120mA SOT-223-3 | ||
BSP125H6327XTSA1 | IGBT Transistors MOSFET N-Ch 600V 120mA SOT-223-3 | ||
BSP125 H6433 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
BSP125H6327XTSA1/SN | Trans MOSFET N-CH 600V 0.12A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP125H6327XTSA1) | ||
BSP125E6433 | SIPMOS SMALL-SIGNAL TRANSISTOR | ||
BSP120 | INSTOCK | ||
BSP121 | 300 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | ||
BSP122 | MOSFET N-CHANNEL 200V 0.55A SOT223, PK | ||
BSP122 / BSP122 | Neu und Original | ||
BSP122+115 | Now Nexperia BSP122 - Small Signal Field-Effect Transistor, 0.55A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSP122.5SM-25-GW-T/R | BUZZER, SUFACE MOUNT PIEZO, 4100+-500 HZ, DIA. 12.8 X 12.8 MM, HEIGHT 2.5MM | ||
BSP122115 | Now Nexperia BSP122 - Small Signal Field-Effect Transistor, 0.55A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSP122TR | Neu und Original | ||
BSP123 | Neu und Original | ||
BSP123 , LTC3200-5 | Neu und Original | ||
BSP123 E6327 | Neu und Original | ||
BSP123 L6327 | MOSFET N-Ch 100V 370mA SOT-223-3 | ||
BSP123///////////////// | Neu und Original | ||
BSP123E6327 | Neu und Original | ||
BSP123L6327 | Neu und Original | ||
BSP124 | Neu und Original | ||
BSP125 | MOSFET, N, SOT-223 | ||
BSP125 H6327 | Trans MOSFET N-CH 600V 0.12A Automotive 4-Pin(3+Tab) SOT-223 T/R | ||
BSP125 H6327 , TEA1532CT | Neu und Original | ||
BSP125 L6327 | Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP125L6327) | ||
BSP125H6327 | 600V,4.5��,0.12A,N-Channel Power MOSFET | ||
BSP125L6327 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSP125L6327XT | Neu und Original | ||
BSP125L6433 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
BSP126 | MOSFET Transistor, N-Channel, SOT-223 | ||
BSP126 , TEA1533T , D89 | Neu und Original | ||
BSP126-115 | Neu und Original | ||
BSP1203SM-25-T/R | Neu und Original | ||
BSP122,115-CUT TAPE | Neu und Original |