 | |  | |
| PartNumber | BSP299 H6327 | BSP299H6327XUSA1 | BSP299 E6327 |
| Description | MOSFET N-Ch 500V 400mA SOT-223-3 | MOSFET N-Ch 500V 400mA SOT-223-3 | MOSFET N-CH 500V 400MA SOT-223 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-4 | SOT-223-4 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Id Continuous Drain Current | 400 mA | 400 mA | - |
| Rds On Drain Source Resistance | 3.1 Ohms | 3.1 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | - | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.8 W | 1.8 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.6 mm | 1.6 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | BSP299 | BSP299 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.5 mm | 3.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 300 mS | 300 mS | - |
| Fall Time | 30 ns | 30 ns | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15 ns | 15 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 55 ns | 55 ns | - |
| Typical Turn On Delay Time | 8 ns | 8 ns | - |
| Part # Aliases | BSP299H6327XUSA1 SP001058628 | BSP299 H6327 SP001058628 | - |
| Unit Weight | 0.003951 oz | 0.003951 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP299 H6327 | MOSFET N-Ch 500V 400mA SOT-223-3 | |
| BSP299H6327XUSA1 | MOSFET N-Ch 500V 400mA SOT-223-3 | ||
| BSP299L6327HUSA1 | MOSFET N-CH 500V 400MA SOT-223 | ||
| BSP299 E6327 | MOSFET N-CH 500V 400MA SOT-223 | ||
| BSP299H6327XUSA1 | IGBT Transistors MOSFET N-Ch 500V 400mA SOT-223-3 | ||
| BSP299L3627 | Neu und Original | ||
| BSP299E6433 | INSTOCK | ||
| BSP299H6327 | 500V,4,0.4A,N-Ch Small-Signal MOSFET | ||
| BSP299 | N CHANNEL MOSFET, 500V, 400mA, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:400mA, Drain Source Voltage Vds:500V, On Resistance Rds(on):4ohm, Rds(on) Test Voltage Vgs:10V, | ||
| BSP299 H6327 | Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R | ||
| BSP299-L6327 | Neu und Original | ||
| BSP299E6327 | Neu und Original | ||
| BSP299L6327 | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP299L6327XT | Neu und Original |