 |  | | |
| PartNumber | BSP372N H6327 | BSP372 E6327 | BSP372L6327HTSA1 |
| Description | MOSFET SMALL SIGNAL N-CH | MOSFET N-CH 100V 1.7A SOT-223 | MOSFET N-CH 100V 1.7A SOT-223 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1.8 A | - | - |
| Rds On Drain Source Resistance | 153 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 14.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP372 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 5.1 S | - | - |
| Fall Time | 18 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6.7 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 47.3 ns | - | - |
| Typical Turn On Delay Time | 5.1 ns | - | - |
| Part # Aliases | BSP372NH6327XTSA1 SP001059326 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP372NH6327XTSA1 | MOSFET SMALL SIGNAL N-CH | |
| BSP373N H6327 | MOSFET N-Ch 100V 1.8A SOT-223-3 | ||
| BSP372N H6327 | MOSFET SMALL SIGNAL N-CH | ||
| BSP373NH6327XTSA1 | MOSFET N-Ch 100V 1.8A SOT-223-3 | ||
| BSP372 E6327 | MOSFET N-CH 100V 1.7A SOT-223 | ||
| BSP372L6327HTSA1 | MOSFET N-CH 100V 1.7A SOT-223 | ||
| BSP372N H6327 | MOSFET SMALL SIGNAL N-CH | ||
| BSP373 E6327 | MOSFET N-CH 100V 1.7A SOT-223 | ||
| BSP373L6327HTSA1 | MOSFET N-CH 100V 1.7A SOT-223 | ||
| BSP373N H6327 | Trans MOSFET N-CH 100V 1.8A T/R | ||
| BSP373NH6327XTSA1 | MOSFET N-CH 100V 1.7A SOT-223 | ||
| BSP372NH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL N-CH | ||
| BSP33TA | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin | ||
| BSP33115 | Neu und Original | ||
| BSP3410G | Neu und Original | ||
| BSP350 | Neu und Original | ||
| BSP350 , TEA19162T/2J , | Neu und Original | ||
| BSP3505D B3 | Neu und Original | ||
| BSP3505D-PO-B3 | Neu und Original | ||
| BSP350E6327 | Neu und Original | ||
| BSP350E6327(Q67000S227) | Neu und Original | ||
| BSP372 | Neu und Original | ||
| BSP372 L6327 | MOSFET N-Ch 100V 1.7A SOT-223-3 | ||
| BSP372L6327 | POWER FIELD-EFFECT TRANSISTOR, 1.7A I(D), 100V, 0.31OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSP372L6327S | Neu und Original | ||
| BSP372L6327XT | Neu und Original | ||
| BSP372NH6327 | Neu und Original | ||
| BSP373 , LP2985IM5-1.8 | Neu und Original | ||
| BSP373 L6327 | Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R - Bulk (Alt: BSP373L6327) | ||
| BSP373-E6327 | Neu und Original | ||
| BSP373NH6327 | 100V,1.8A,N-Ch Small-Signal MOSFET | ||
| BSP373NH6327S | Neu und Original | ||
| BSP350E6907 | Neu und Original | ||
| BSP350CHIP | Neu und Original | ||
| BSP372NH6327XTSA1-CUT TAPE | Neu und Original | ||
| BSP350 E6327 | Neu und Original | ||
| BSP372N | Neu und Original | ||
| BSP373 | Neu und Original | ||
| BSP373 _ | Neu und Original | ||
| BSP373N | Neu und Original | ||
| BSP3917 | Neu und Original | ||
| BSP373E6327 | - Bulk (Alt: BSP373E6327) | ||
| BSP373L6327 | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Nexperia |
BSP33,115 | Bipolar Transistors - BJT TRANS MED PWR TAPE-7 |