BSP324

BSP324H6327XTSA1 vs BSP324L6327HTSA1 vs BSP324 E6327

 
PartNumberBSP324H6327XTSA1BSP324L6327HTSA1BSP324 E6327
DescriptionMOSFET N-Ch 400V 170mA SOT-223-3MOSFET N-CH 400V 170MA SOT-223MOSFET N-CH 400V 170MA SOT-223
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage400 V--
Id Continuous Drain Current170 mA--
Rds On Drain Source Resistance13.6 Ohms--
Vgs th Gate Source Threshold Voltage1.9 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge4.54 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
SeriesBSP324--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min0.09 S--
Fall Time68 ns--
Product TypeMOSFET--
Rise Time4.4 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time4.6 ns--
Part # AliasesBSP324 H6327 SP001058786--
Unit Weight0.003951 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSP324H6327XTSA1 MOSFET N-Ch 400V 170mA SOT-223-3
BSP324L6327HTSA1 MOSFET N-CH 400V 170MA SOT-223
BSP324 E6327 MOSFET N-CH 400V 170MA SOT-223
BSP324H6327XTSA1 MOSFET N-CH 400V 170MA SOT-223
BSP324 MOSFET, N, SOT-223
BSP324 H6327 N-CH MOS-FET 0,17A 400V SOT223
BSP324 L6327 MOSFET N-Ch 400V 170mA SOT-223-3
BSP324L6327 Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSP324H6327XTSA1-CUT TAPE Neu und Original
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