BSP372

BSP372N H6327 vs BSP372 E6327 vs BSP372L6327HTSA1

 
PartNumberBSP372N H6327BSP372 E6327BSP372L6327HTSA1
DescriptionMOSFET SMALL SIGNAL N-CHMOSFET N-CH 100V 1.7A SOT-223MOSFET N-CH 100V 1.7A SOT-223
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current1.8 A--
Rds On Drain Source Resistance153 mOhms--
Vgs th Gate Source Threshold Voltage800 mV--
Vgs Gate Source Voltage20 V--
Qg Gate Charge14.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.8 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length6.5 mm--
SeriesBSP372--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandInfineon Technologies--
Forward Transconductance Min5.1 S--
Fall Time18 ns--
Product TypeMOSFET--
Rise Time6.7 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time47.3 ns--
Typical Turn On Delay Time5.1 ns--
Part # AliasesBSP372NH6327XTSA1 SP001059326--
Unit Weight0.003951 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSP372NH6327XTSA1 MOSFET SMALL SIGNAL N-CH
BSP372N H6327 MOSFET SMALL SIGNAL N-CH
BSP372 E6327 MOSFET N-CH 100V 1.7A SOT-223
BSP372L6327HTSA1 MOSFET N-CH 100V 1.7A SOT-223
BSP372NH6327XTSA1 IGBT Transistors MOSFET SMALL SIGNAL N-CH
BSP372 Neu und Original
BSP372 L6327 MOSFET N-Ch 100V 1.7A SOT-223-3
BSP372L6327 POWER FIELD-EFFECT TRANSISTOR, 1.7A I(D), 100V, 0.31OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSP372L6327S Neu und Original
BSP372L6327XT Neu und Original
BSP372N Neu und Original
BSP372N H6327 MOSFET SMALL SIGNAL N-CH
BSP372NH6327 Neu und Original
BSP372NH6327XTSA1-CUT TAPE Neu und Original
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