 |  |  | |
| PartNumber | BSS223PW H6327 | BSS223PWH6327XTSA1 | BSS223PW L6327 |
| Description | MOSFET P-Ch -20V -390mA SOT-323-3 | MOSFET P-Ch -20V -390mA SOT-323-3 | MOSFET P-CH 20V 390MA SOT-323 |
| Manufacturer | Infineon | Infineon | infineon |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-323-3 | SOT-323-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 390 mA | 390 mA | - |
| Rds On Drain Source Resistance | 2.1 Ohms | 2.1 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | 600 mV | - |
| Vgs Gate Source Voltage | 2.5 V | 2.5 V | - |
| Qg Gate Charge | - 0.5 nC | - 0.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 250 mW | 250 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 0.9 mm | - |
| Length | 2.9 mm | 2 mm | - |
| Series | BSS223 | BSS223 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 1.3 mm | 1.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 0.35 S | 0.35 S | - |
| Fall Time | 3.2 ns | 3.2 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 5.1 ns | 5.1 ns | - |
| Typical Turn On Delay Time | 3.8 ns | 3.8 ns | - |
| Part # Aliases | BSS223PWH6327XT BSS223PWH6327XTSA1 SP000843010 | BSS223PW BSS223PWH6327XT H6327 SP000843010 | - |
| Unit Weight | 0.000176 oz | 0.000176 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS225 H6327 | MOSFET N-Ch 600V 90mA SOT-89-3 | |
| BSS225H6327FTSA1 | MOSFET N-Ch 600V 90mA SOT-89-3 | ||
| BSS223PW H6327 | MOSFET P-Ch -20V -390mA SOT-323-3 | ||
| BSS223PWH6327XTSA1 | MOSFET P-Ch -20V -390mA SOT-323-3 | ||
| BSS223PW L6327 | MOSFET P-CH 20V 390MA SOT-323 | ||
| BSS223PWH6327XTSA1 | MOSFET P-CH 20V 390MA SOT-323 | ||
| BSS225 | MOSFET N-CH 600V 0.09A SOT-89 | ||
| BSS225 H6327 | MOSFET N-Ch 600V 90mA SOT-89-3 | ||
| BSS225H6327FTSA1 | MOSFET N-CH 600V 0.09A SOT-89 | ||
| BSS225L6327HTSA1 | MOSFET N-CH 600V 0.09A SOT-89 | ||
| BSS225H6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSS223PW H6327 | Neu und Original | ||
| BSS223PW E6327 | Neu und Original | ||
| BSS223PW,L6327 | Neu und Original | ||
| BSS223PWH6327 | Trans MOSFET P-CH 20V 0.39A Automotive 3-Pin SOT-323 T/R | ||
| BSS223PWL6327 , TFZ39B , | Neu und Original | ||
| BSS223PWL6327XT | -20V,-390MA,P-channel power MOSFET | ||
| BSS225 E6327 | Neu und Original | ||
| BSS225 H6327(SP001047644 | Neu und Original | ||
| BSS225 L6327 | MOSFET N-Ch 600V 90mA SOT-89-3 | ||
| BSS225 L6327 , TFZ5.1B , | Neu und Original | ||
| BSS225E6327 | Neu und Original | ||
| BSS225H6327 | Trans MOSFET N-CH 600V 0.09A 3-Pin SOT-89 T/R (Alt: BSS225 H6327) | ||
| BSS225L6327 | Neu und Original | ||
| BSS225L6327 , MDL914S2 | Neu und Original | ||
| BSS229 | Neu und Original | ||
| BSS229B | Neu und Original | ||
| BSS23 | Bipolar Junction Transistor, NPN Type, TO-18 | ||
| BSS25 | Neu und Original | ||
| BSS26 | Neu und Original | ||
| BSS277 | Neu und Original | ||
| BSS284 | Neu und Original | ||
| BSS284 E-6433 | Neu und Original | ||
| BSS284 E6327 | Neu und Original | ||
| BSS284E-6327 | Neu und Original | ||
| BSS284E6327 | Neu und Original | ||
| BSS284E6327 , MAX6337US2 | Neu und Original | ||
| BSS29 | Neu und Original | ||
| BSS295 | Neu und Original | ||
| BSS295E6325 | Small Signal Field-Effect Transistor, 1.4A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | ||
| BSS296 | Neu und Original | ||
| BSS297 | Neu und Original | ||
| BSS223PWL6327 | Small Signal Field-Effect Transistor, 0.39A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |