PartNumber | BSS6-4 | BSS6 | BSS60 |
Description | DWO 4 SLOW SE200-295STICKS 24 PER PACK 60-90 SEC SET TIME | ||
Manufacturer | - | - | Infineon Technologies |
Product Category | - | - | Transistors - FETs, MOSFETs - Single |
Series | - | - | BSS606 |
Packaging | - | - | Reel |
Part Aliases | - | - | BSS606N H6327 SP000691152 |
Unit Weight | - | - | 0.004603 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | SOT-89-4 |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 1 W |
Id Continuous Drain Current | - | - | 2.3 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 60 mOhms |
Transistor Polarity | - | - | N-Channel |
Qg Gate Charge | - | - | 1.6 nC |
Hersteller | Teil # | Beschreibung | RFQ |
---|---|---|---|
BSS63AT116 | Bipolar Transistors - BJT TRANSISTOR FOR HIGH VOLT AMP | ||
BSS63LT1G | Bipolar Transistors - BJT 100mA 110V PNP | ||
BSS63 T/R | Bipolar Transistors - BJT TRANS HV TAPE-7 | ||
BSS6-4 | DWO 4 SLOW SE200-295STICKS 24 PER PACK 60-90 SEC SET TIME | ||
BSS63_Q | Bipolar Transistors - BJT PNP/ 100V/ 200mA | ||
BSS63-E6327 | 800 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR | ||
BSS63TR | Neu und Original | ||
BSS63AT | Neu und Original | ||
BSS6 | Neu und Original | ||
BSS60 | Neu und Original | ||
BSS606N | Neu und Original | ||
BSS606N H6327 | Trans MOSFET N-CH 60V 3.2A Automotive T/R | ||
BSS606NH6327 | Nchannel 60V 3.2A 90mO @4.5V - Bulk (Alt: BSS606NH6327) | ||
BSS61 | Neu und Original | ||
BSS62 | Neu und Original | ||
BSS63 , MAX6503UKN015 | Neu und Original | ||
BSS63 BV4 | Neu und Original | ||
BSS63(BM) | Neu und Original | ||
BSS63+215 | Now Nexperia BSS63 - Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB | ||
BSS63-E-6327 | Neu und Original | ||
BSS63/AT | Neu und Original | ||
BSS63215 | Now Nexperia BSS63 - Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB | ||
BSS63E6327 | Small Signal Bipolar Transistor, 0.8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon | ||
BSS63E6433 | Small Signal Bipolar Transistor, 0.8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon | ||
BSS63L BM | Neu und Original | ||
BSS63LT1 | Bipolar Transistors - BJT 100mA 110V PNP | ||
BSS63LT1G(BN) | Neu und Original | ||
BSS63R | Neu und Original | ||
BSS63R E6327 | Neu und Original | ||
BSS63RE6327 | Neu und Original | ||
BSS63RE6327 , TFZ9.1B , | Neu und Original | ||
BSS63T/R | Neu und Original | ||
BSS63TA | Bipolar Transistors - BJT | ||
BSS63TC | Neu und Original | ||
BSS63_NL | Neu und Original | ||
BSS64 / AM | Neu und Original | ||
BSS64 , MAX6364HUT23 | Neu und Original | ||
BSS64(AM) | Neu und Original | ||
BSS63LT1G-CUT TAPE | Neu und Original | ||
BSS63T116 | BSS63 IS A SOT-23 PACKAGE TRANSI | ||
BSS63AT116 | TRANS 100V 100A SOT-23 | ||
Nexperia |
BSS64,215 | Bipolar Transistors - BJT TRANS HV TAPE-7 | |
BSS63,215 | Bipolar Transistors - BJT TRANS HV TAPE-7 | ||
BSS63,215 | Bipolar Transistors - BJT TRANS HV TAPE-7 | ||
Infineon Technologies |
BSS606NH6327XTSA1 | MOSFET N-Ch 60V 3.2A SOT-89-3 | |
BSS606N H6327 | MOSFET N-Ch 60V 2.3A SOT-89-3 | ||
BSS606NH6327XTSA1 | MOSFET N-CH 60V 3.2A SOT89 | ||
ON Semiconductor |
BSS64 | TRANS NPN 80V 0.2A SOT-23 | |
BSS63 | Bipolar Transistors - BJT PNP/ 100V/ 200mA | ||
BSS63LT1G | Bipolar Transistors - BJT 100mA 110V PNP |