BSS8402DW-7

BSS8402DW-7-F vs BSS8402DW-7 vs BSS8402DW-7-99-F , TFZFH

 
PartNumberBSS8402DW-7-FBSS8402DW-7BSS8402DW-7-99-F , TFZFH
DescriptionMOSFET 60 / -50V 200mWMOSFET 60 / -50V 200mW
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6SOT-363-6-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage60 V, 50 V70 V, 50 V-
Id Continuous Drain Current115 mA, 130 mA115 mA-
Rds On Drain Source Resistance7.5 Ohms, 10 Ohms4.4 Ohms-
Vgs th Gate Source Threshold Voltage1 V, 800 mV--
Vgs Gate Source Voltage5 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation200 mW200 mW-
ConfigurationDualDual-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1 mm1 mm-
Length2.2 mm2.2 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesBSS84BSS8402DW-
Transistor Type1 N-Channel, 1 P-Channel1 N-Channel, 1 P-Channel-
TypeEnhancement Mode Field Effect TransistorFET-
Width1.35 mm1.35 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min0.08 S, 0.05 S0.08 S, 0.05 S-
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time11 ns, 18 ns11 ns, 18 ns-
Typical Turn On Delay Time7 ns, 10 ns7 ns, 10 ns-
Unit Weight0.000212 oz0.000212 oz-
Hersteller Teil # Beschreibung RFQ
Diodes Incorporated
Diodes Incorporated
BSS8402DW-7-F MOSFET 60 / -50V 200mW
BSS8402DW-7 MOSFET 60 / -50V 200mW
BSS8402DW-7 MOSFET N/P-CH 60V/50V SC70-6
BSS8402DW-7-99-F , TFZFH Neu und Original
BSS8402DW-7-F Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A Automotive 6-Pin SOT-363 T/R
BSS8402DW-7-F-79 Tran MOSFET Array N-CH/P-CH 60V/-50V 115mA/-130mA 6-Pin SOT-363 SMD T/R - Tape and Reel (Alt: BSS8402DW-7-F-79)
BSS8402DW-7-F-HN Neu und Original
BSS8402DW-7-G Neu und Original
BSS8402DW-7-F-CUT TAPE Neu und Original
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