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| PartNumber | BSZ086P03NS3GATMA1 | BSZ086P03NS3G | BSZ086P03NS3G , TFZV39B |
| Description | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | ||
| Manufacturer | Infineon | INF | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 6.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.1 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 57.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | BSZ086P03 | OptiMOS | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 30 S | - | - |
| Fall Time | 8 ns | 8 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 46 ns | 46 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | 35 ns | - |
| Typical Turn On Delay Time | 16 ns | 16 ns | - |
| Part # Aliases | BSZ086P03NS3 BSZ86P3NS3GXT G SP000473024 | - | - |
| Part Aliases | - | BSZ086P03NS3GATMA1 BSZ086P03NS3GXT SP000473024 | - |
| Tradename | - | OptiMOS | - |
| Package Case | - | 8-PowerTDFN | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PG-TSDSON-8 (3.3x3.3) | - |
| FET Type | - | MOSFET P-Channel, Metal Oxide | - |
| Power Max | - | 69W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 4785pF @ 15V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 13.5A (Ta), 40A (Tc) | - |
| Rds On Max Id Vgs | - | 8.6 mOhm @ 20A, 10V | - |
| Vgs th Max Id | - | 1.9V @ 105μA | - |
| Gate Charge Qg Vgs | - | 57.5nC @ 10V | - |
| Pd Power Dissipation | - | 69 W | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Id Continuous Drain Current | - | 13.5 A | - |
| Vds Drain Source Breakdown Voltage | - | - 30 V | - |
| Rds On Drain Source Resistance | - | 8.6 mOhms | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ086P03NS3GATMA1 | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | |
| BSZ086P03NS3GXT | MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3 | ||
| BSZ086P03NS3GATMA1 | MOSFET P-CH 30V 40A TSDSON-8 | ||
| BSZ086P03NS3G | Neu und Original | ||
| BSZ086P03NS3G , TFZV39B | Neu und Original | ||
| BSZ086P03NS3GATMA1-CUT TAPE | Neu und Original |