BSZ100N06N

BSZ100N06NSATMA1 vs BSZ100N06NS vs BSZ100N06NSATMA1-CUT TAPE

 
PartNumberBSZ100N06NSATMA1BSZ100N06NSBSZ100N06NSATMA1-CUT TAPE
DescriptionMOSFET MV POWER MOSMOSFET DIFFERENTIATED MOSFETS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSDSON-8PG-TSDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current40 A40 A-
Rds On Drain Source Resistance8.5 mOhms10 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V2.1 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge15 nC12 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation36 W36 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length3.3 mm3.3 mm-
SeriesOptiMOS 5OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm3.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min16 S16 S-
Fall Time2 ns2 ns-
Product TypeMOSFETMOSFET-
Rise Time2 ns2 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time10 ns10 ns-
Typical Turn On Delay Time6 ns6 ns-
Part # AliasesBSZ100N06NS SP001067006BSZ100N06NSATMA1 SP001067006-
Unit Weight0.005503 oz0.001249 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
BSZ100N06NSATMA1 MOSFET MV POWER MOS
BSZ100N06NS MOSFET DIFFERENTIATED MOSFETS
BSZ100N06NSATMA1 MOSFET N-CH 60V 40A 8TSDSON
BSZ100N06NS MOSFET DIFFERENTIATED MOSFETS
BSZ100N06NSATMA1-CUT TAPE Neu und Original
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