 |  | | |
| PartNumber | BSZ130N03MS G | BSZ130N03MS | BSZ130N03MSG |
| Description | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3M | Power Field-Effect Transistor, 9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 9 A | - | - |
| Rds On Drain Source Resistance | 11.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Series | OptiMOS 3M | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.2 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 3.4 ns | - | - |
| Part # Aliases | BSZ130N03MSGATMA1 BSZ13N3MSGXT SP000313122 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ130N03MS G | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3M | |
| BSZ130N03MSGATMA1 | MOSFET N-CH 30V 35A TSDSON-8 | ||
Infineon Technologies |
BSZ130N03MSGATMA1 | MOSFET LV POWER MOS | |
| BSZ130N03MS | Neu und Original | ||
| BSZ130N03MS G | Trans MOSFET N-CH 30V 9A 8-Pin TSDSON T/R - Bulk (Alt: BSZ130N03MSG) | ||
| BSZ130N03MSG | Power Field-Effect Transistor, 9A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |